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Oxford Instruments Plasma Technology
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News releases from this company
TDI, an Oxford Instruments company, has recently advanced the Hydride Vapour Phase Epitaxy (HVPE) technology to the growth of InGaN.
News from Electronicstalk, 24 October 2008
Ion beam tools explained
Ion beam technology tool offerings are suitable for both R and D and batch production capabilities.
News from Electronicstalk, 28 July 2008
Nine systems will provide University of Southampton with leading-edge capabilities in the research and development of novel nanoelectronic, MEMS and photonic devices.
News from Electronicstalk, 20 December 2007
Dry etch deprocessing is enhanced
Plasma Accelerator delivers increased etching speeds, superior duplication rates, straightforward operation and low damage.
News from Electronicstalk, 5 December 2007
The PlasmalabuEtchEL provides the clean removal of polyimide, nitrides and oxides to reveal the underlying device structure for the desired analysis.
News from Electronicstalk, 1 November 2007
Nano-imprint lithography is a versatile, cost-effective, flexible and high-throughput method for fabrication of down to and below 10nm structures.
News from Electronicstalk, 13 September 2007
A provider of flexible tools and processes for the engineering of nanoscale structures and devices has appointed Andy Matthews as its new Managing Director
News from Electronicstalk, 23 March 2007
Oxford Instruments has delivered a twin V100 molecular beam epitaxy system to a prestigious customer in Asia.
News from Electronicstalk, 2 February 2007
Oxford Instruments Plasma Technology has been awarded Beacon status in recognition of its consistent growth and product innovation.
News from Electronicstalk, 11 January 2007
Oxford Instruments has developed a new TEOS delivery module for plasma-enhanced chemical vapour deposition of silicon dioxide in its PlasmalabSystem100 and PlasmalabSystem133 deposition tools.
News from Electronicstalk, 5 January 2007
The new ECellAs valved arsenic effusion source or "cracker cell" for molecular beam epitaxy is designed for high performance MBE growth of arsenic-containing III-V materials.
News from Electronicstalk, 13 November 2006
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