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Product category: Discrete Power Devices
News Release from: Freescale Semiconductor | Subject: MW6IC2240NB etc
Edited by the Electronicstalk Editorial Team on 14 February 2007

Power transistor is made for Chinese

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High-power multistage RF power LDMOS FET is characterised for TD-SCDMA wireless basestations.

In the worldwide race to prepare for deployment of next-generation wireless standards, Freescale Semiconductor has introduced a high-power multistage RF power LDMOS FET characterised for Time Division-Synchronous Code Division Multiple Access (TD-SCDMA) wireless basestations The TD-SCDMA standard is a third-generation wireless access method that is expected to be widely deployed in the People's Republic of China