Embedded memory works on 90nm SoI process

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Edited by the Electronicstalk editorial team Jan 24, 2006

Innovative Silicon has achieved silicon validation of Z-RAM memory arrays on 90nm SoI process technologies.

Innovative Silicon has achieved silicon validation of Z-RAM memory arrays on 90nm SoI process technologies.

The company has also validated its memory bitcell (which requires only one transistor and zero capacitors) in an additional 10 fabrication processes that include 130nm SoI, 90nm SoI and FinFET technologies.

The company expects to demonstrate working silicon in multiple 65nm processes later this quarter.