Click on the advert above to visit the company web site

Product category: Intellectual Property Cores
News Release from: Innovative Silicon | Subject: Z-RAM
Edited by the Electronicstalk Editorial Team on 05 September 2005

Embedded memory exploits SoI floating
body effect

Z-RAM embedded memory technology for SoCs can double memory density when compared with existing embedded DRAM solutions.

Innovative Silicon (ISi) has launched its Z-RAM embedded memory technology for SoCs which can double memory density when compared with existing embedded DRAM solutions The Z-RAM (zero capacitor RAM) technology harnesses the floating body (FB) effect that occurs in silicon-on-insulator (SoI) devices, resulting in a cell structure that is based on a single transistor alone, rather than the combination of a transistor and a capacitor