Product category: Discrete Power Devices
News Release from: Flint | Subject: TUMT and TSMT MOSFETs
Edited by the Electronicstalk Editorial Team on 24 August 2005

Power MOSFETs come
in ultracompact packages

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Rohm Electronics is significantly enlarging its ultracompact power-MOSFET lineup, which already encompasses 60 different devices

Besides simple N- and P-channel MOSFETs, pairs of transistors or combinations with Schottky diodes can be specified to save PCB area and costs. The different packages offer 3, 5 or 6 pins, depending on the version. The MOSFETs are available in drain-source voltages of 20 or 30V, and in drive voltages of 2.5 and 4V.

The footprints of the TUMT and TSMT packages are just 2.0 x 2.1 and 2.8 x 2.9mm, with respective heights of 0.85 and 1mm for TSMT.

Despite these very small sizes, the MOSFETs are able to switch currents up to 4.5A, depending on the specific version.

These high current values are made possible by special mounting and packaging techniques in addition to extremely low channel resistances.

Some devices offer values as low as 30mohm (for a gate-source voltage of 4.5V).

The maximum power dissipation of Rohm's TUMT and TSMT MOSFETs range from 0.8 to 1.2W.

This is an improvement of up to 330% compared with other packages with the same footprint size.

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