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Product category: Discrete Power Devices
News Release from: Fairchild Semiconductor | Subject: FDB2614 and FDB2710
Edited by the Electronicstalk Editorial Team on 16 February 2007

MOSFETs cut figure of merit for display
switching

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N-channel MOSFETs provide industry-leading system efficiency and space optimisation in plasma display panel applications.

Fairchild Semiconductor's new FDB2614 (200V) and FDB2710 (250V) N-channel MOSFETs are designed specifically to provide industry-leading system efficiency and space optimisation in plasma display panel (PDP) applications By utilising Fairchild's proprietary PowerTrench process technology, these MOSFETs achieve the lowest available on-resistance (typically 22.9mohm for the FDB2614 and 36.3mohm for the FDB2710), compared with similar devices on the market