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Product category: Optoelectronic Sensors, Switches and Receivers
News Release from: AP Technologies | Subject: ODA-5W-100M
Edited by the Electronicstalk Editorial Team on 4 January 2007

Silicon photodiode takes preamp onboard

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Opto Diode Corporation's ODA-5W-100M combines a high responsivity 5mm2 active area silicon photodiode with a 100Mohm preamplifier

AP Technologies is pleased to announce the international release of Opto Diode Corporation's ODA-5W-100M which combines a high responsivity 5mm2 active area silicon photodiode with a 100Mohm preamplifier. Typical applications for these high sensitivity devices are fluorescence spectroscopy and low-light-level tasks where electrical noise can affect the photodiode signal if the detector and amplifier are separate components on a circuit board.

The standard red/NIR-enhanced device has a responsivity of 40V/uW at 660nm - visible enhanced versions can also be supplied.

The ODA-5W-100 operates from +/-15V and is supplied in a hermetically sealed 4+1 lead TO-5 window package and has a frequency response of 1kHz, a low offset voltage of +/- 1mV and dark offset noise of 5mV RMS.

Martin Sharratt, Managing Director of APT said: 'As well as being an exciting product in its own right the addition of the ODA-5W-100 provides a platform for a wide range of application-specific solutions by optimising the detector geometry and feedback circuitry'.

The ODA-5W-100M is manufactured at Opto Diode's state-of-the-art facility in Newbury Park, California in the Class 1000 cleanroom and high volume fully automated packaging facility.

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The laser diode specialists