Discrete Power Devices
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Latest articles from 'Discrete Power Devices'
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Showing 426-432 of 432 articles
Dynex Semiconductor announces the release of a new family of high-voltage fast-recovery diode (FRD) modules for use in applications including traction and industrial motor drives.
News from Dynex Semiconductor, Mar 19, 2001
Two new 20V HEXFET power MOSFET families from International Rectifier are designed to increase efficiency by up to 4% in 12V-input DC/DC convertors.
News from International Rectifier, Mar 16, 2001
Dynex Semiconductor has released a new compact IGBT module package designed for applications up to 3300V including traction auxiliaries and specialist motor drives.
News from Dynex Semiconductor, Mar 14, 2001
Toshiba Electronics Europe has expanded its Compact Standard Series of IGBT modules with the addition of three new 250V devices aimed at high-power switching and motor control.
News from Toshiba Electronics Europe, Mar 7, 2001
The MG400A2YM60 silicon N-channel power MOSFET module from Toshiba incorporates both a thermistor to detect case temperature and an integrated thermal sensor diode to monitor die temperature.
News from Toshiba Electronics Europe, Mar 2, 2001
International Rectifier has introduced the world's first 1000V radiation-hardened power MOSFET.
News from International Rectifier, Feb 15, 2001
Intersil has launched its advanced new DenseTrench power MOSFET family of discrete power devices designed for higher-efficiency low-voltage power switching applications.
News from Intersil, Jan 8, 2001
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