Discrete Power Devices

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Latest articles from 'Discrete Power Devices'

News releases from this sub-category

Showing 401-425 of 432 articles

Schottky diodes improve reverse current losses

New Schottky barrier diodes (SBDs) from Shindengen address the improved output voltage requirements of today's AC adapters through dramatic improvements in reverse current.

News from Shindengen UK, Oct 3, 2001

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Two MOSFETs are better in one package

International Rectifier has introduced the IRF5810 dual MOSFET in a TSOP-6 package which combines two P-channel HEXFET power MOSFETs into a single 1.3 x 2.9mm footprint.

News from International Rectifier, Sep 27, 2001

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High-efficiency MOSFETs aim for backplane power

International Rectifier has expanded its family of SOIC-packaged HEXFET power MOSFETs to address the lowest power ranges found in backplane DC/DC convertors in telecomms and datacomms industries.

News from International Rectifier, Sep 20, 2001

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300V diodes provide ideal performance for PSUs

International Rectifier has expanded its fast recovery epitaxial diode (FRED) family to include 300V ultrafast diodes.

News from International Rectifier, Sep 7, 2001

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High-temperature MOSFET handles automotive stress

International Rectifier has introduced a HEXFET power MOSFET with a maximum temperature rating of 200C in a TO-220 plastic package.

News from International Rectifier, Aug 22, 2001

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Low thermal resistance for high-power IGBTs

Dynex Semiconductor has released a new range of high-power 3300V IGBTs packaged in industry standard isolated module outlines.

News from Dynex Semiconductor, Aug 14, 2001

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Smaller MOSFETs deliver standard performance

Fairchild Semiconductor reckons the first of its new generation of PowerTrench N-channel MOSFETs is substantially smaller than competing devices.

News from Fairchild Semiconductor, Aug 13, 2001

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IGBTs optimised for high-volume appliance drives

International Rectifier has announced the expansion of its line of Co-Pack IGBTs with the new IRG4BC15UD, IRG4BC15UD-S and IRG4BC20UD-S devices.

News from International Rectifier, Aug 3, 2001

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Low on-state resistance puts MOSFETs in ballasts

Fairchild Semiconductor has a new family of TO-92L-packaged N-channel MOSFETs designed to provide improved performance and lower cost than I-PAK MOSFETs in compact ballast applications.

News from Fairchild Semiconductor, Jul 19, 2001

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Power switches cut losses in CRT designs

New from Fairchild Semiconductor is the FS6S series of highly integrated SMPS (switched-mode power supply) power switches for CRT monitor flyback power supplies.

News from Fairchild Semiconductor, Jul 9, 2001

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Smallest packaged IGBT for automotive ignition

New from Fairchild Semiconductor, the EcoSpark family of IGBTs is designed for use as ignition coil drivers.

News from Fairchild Semiconductor, Jun 21, 2001

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FRFETs improve diode reverse recovery

Fairchild Semiconductor has a new family of 500V fast-recovery MOSFETs designed to provide significant performance enhancements in telecomms and server power system designs.

News from Fairchild Semiconductor, Jun 21, 2001

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ESD-protected MOSFETs keep a low profile

Toshiba Electronics has used its latest trench semiconductor technology to produce high-current, ESD-protected single and dual MOSFET devices in the industry's lowest profile packaging.

News from Toshiba Electronics Europe, Jun 21, 2001

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Dynex can do IGBTs for Renault's hybrid Kangoo

Dynex Power has received a major production order from Groupe SAGEM to provide power semiconductor modules for Renault's new Kangoo all-electric and hybrid thermal-electric minivan.

News from Dynex Semiconductor, Jun 20, 2001

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Bipolar junction transistors boost HDTV

Fairchild Semiconductor has released its next generation of horizontal deflection transistor (HDTR) products.

News from Fairchild Semiconductor, Jun 11, 2001

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Fast-recovey diodes range up to 400V

International Rectifier has expanded its ultra-fast-recovery epitaxial diode (FRED) family to include 400V-rated devices.

News from International Rectifier, Jun 8, 2001

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P-channel MOSFETs handle higher input voltages

New 30V P-channel PowerTrench MOSFET technology from Fairchild Semiconductor features enhanced rugged-gate technology with 25V gate-to-source maximum rating.

News from Fairchild Semiconductor, Jun 6, 2001

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Dual packaging for Stealth soft recovery diodes

Fairchild Semiconductor has packaged its Stealth soft recovery diodes in pairs for improved efficiency with reduced space in switch mode power supplies.

News from Fairchild Semiconductor, May 30, 2001

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Dynamic diode duo improve TV horizontal voltage

New from Fairchild Semiconductor, the FFPF60B150DS is a copackaged damper and modulation diode pair for improving horizontal voltage control in colour televisions and monitors.

News from Fairchild Semiconductor, May 15, 2001

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Dual-channel MOSFET switches shrink USB power

New dual-channel MOSFET switches from Rohm Electronics combine SOP8 packaging with very low on resistances and are designed to save space and reduce component count in USB applications.

News from Rohm Electronics (UK), Apr 26, 2001

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Dual power MOSFET switches 25% faster

A semiconductor process that enables a threefold increase in cell density compared with previous technologies is behind a new generation of space-saving power MOSFETs from Toshiba.

News from Toshiba Electronics Europe, Apr 13, 2001

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MOSFET is ready for high-voltage car batteries

The new FDB06AN08A1 UltraFET trench MOSFET from Fairchild Semiconductor is designed for 42V automotive battery applications requiring full device capability at low gate drive voltages.

News from Fairchild Semiconductor, Apr 12, 2001

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Rad-hard MOSFETs protect and survive

With high radiation hardness and unparalleled single event effect (SEE) immunity, International Rectifier's new R5 MOSFETs are well suited for systems that must survive penetrating gamma rays.

News from International Rectifier, Apr 5, 2001

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New package gives Schottky diodes lower profile

A new series of Schottky power diodes from Toshiba uses advanced M-Flat packaging to offer a footprint compatible with existing SMA devices, while reducing package height by more than 50%.

News from Toshiba Electronics Europe, Apr 4, 2001

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MOSFETs improve power density on both sides

New from International Rectifier are two TO-220-packaged HEXFET power MOSFETs that maximise power density and performance in primary- and secondary-side DC/DC convertor circuits.

News from International Rectifier, Mar 20, 2001

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Showing 401-425 of 432 articles

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