Discrete Power Devices
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Latest articles from 'Discrete Power Devices'
News releases from this sub-category
Showing 351-375 of 432 articles
A novel "Bottomless" MOSFET package combines the thermal performance of the much larger TO-263 (D2-PAK) with very low on-resistance in a standard SO-8 package outline.
News from Fairchild Semiconductor, Aug 2, 2002
Fairchild Semiconductor has two new dual N-channel and two new dual P-channel 20V MOSFET BGA products with physical and electrical characteristics ideal for Li-ion battery pack protection.
News from Fairchild Semiconductor, Jul 31, 2002
International Rectifier has four new 60A schottky diodes in TO-220 packages.
News from International Rectifier, Jul 31, 2002
Shindengen's J-series Schottky barrier diodes are extremely low reverse leakage devices that maintain low losses even at high operating temperatures.
News from Shindengen UK, Jul 26, 2002
A new pair of 100V HEXFET power MOSFETs can increase power density in the 48V-input half- or full-bridge topologies of DC/DC convertors used in telecomms and datacomms equipment.
News from International Rectifier, Jul 25, 2002
A new miniature, high-reliability power MOSFET module from Toshiba will significantly simplify the implementation of space-constrained automotive designs for the latest 42V power schemes.
News from Toshiba Electronics Europe, Jul 25, 2002
Philips has developed a new family of leading-edge MOSFETs for automotive applications.
News from Philips Semiconductors, Jul 24, 2002
The latest miniature surface-mount diodes from Rohm offer low forward voltage and reverse current ratings and are just half the height and one-seventh the volume of previous generations of devices.
News from Rohm Electronics (UK), Jul 24, 2002
Fairchild Semiconductor has a new range of low-on-resistance N-channel 20V MOSFETs, designed to improve efficiency in DC/DC convertor applications, with low gate voltages down to 1.5V.
News from Fairchild Semiconductor, Jul 10, 2002
Shindengen reckons its latest bridge rectifier is the thinnest device of its type currently available.
News from Shindengen UK, Jul 10, 2002
Dynex Semiconductor has released a pair of bidirectional IGBT modules for use in matrix convertor power stages.
News from Dynex Semiconductor, Jul 4, 2002
A novel pair of MOSFETs manufactured by Vishay to help to make portable devices run cooler, use less power and function longer will be distributed by Future Electronics across Europe.
News from Future Electronics, Jul 3, 2002
International Rectifier has three new high-current 150 and 200V-rated HEXFET power MOSFETs optimised for the primary side of 48V isolated DC/DC convertors.
News from International Rectifier, Jul 2, 2002
Motorola has been working with Nanjing University and the Institute of Physics of Chinese Academy of Sciences to characterise the material properties of lanthanum aluminate films.
News from Freescale Semiconductor, Jun 27, 2002
Offering a tuning range from 0.5 to 2.5V, the ZV950 series of hyperabrupt varactor diodes from Zetex are designed to meet the needs of 3V frequency control and filtering systems.
News from Zetex, Jun 27, 2002
International Rectifier has extended its power product portfolio for portable electronics with four new dual HEXFET power MOSFETs in the TSSOP-8 package.
News from International Rectifier, Jun 26, 2002
The QLPAK is novel miniature power MOSFET package that combines small size with more efficient thermal properties.
News from Philips Semiconductors, Jun 21, 2002
Shindengen's new bridge diodes feature an optimised leadframe construction for enhanced thermal radiation, to deliver improved reliability in service.
News from Shindengen UK, May 30, 2002
Four new P-channel MOSFET BGAs combine exceptionally small size with low on-resistance to deliver a highly effective solution for load switching in portable, wireless and networking applications.
News from Fairchild Semiconductor, May 20, 2002
Toshiba has a new generation of miniature chip scale power MOSFET packages that are over 60% thinner than conventional TO-220SM (D2PAK) devices yet require 30% less PCB mounting area.
News from Toshiba Electronics Europe, May 20, 2002
Dynex Semiconductor has developed a new 1200V low-loss IGBT process technology and associated family of IGBT modules.
News from Dynex Semiconductor, May 17, 2002
Fairchild Semiconductor has successfully qualified its line of new medium-voltage (60-150V) UltraFET trench MOSFET technology for automotive applications.
News from Fairchild Semiconductor, May 17, 2002
The Zetex advanced trench MOSFET process is set to yield its first P-channel devices during the second quarter of 2002.
News from Zetex, May 13, 2002
For applications needing close tuner diode matching, Zetex has released a pair of dual common-cathode hyperabrupt varactors.
News from Zetex, Apr 26, 2002
Introduced to simplify MOSFET selection, a comprehensive new product guide from Zetex covers its complete range of N- and P-channel devices.
News from Zetex, Apr 3, 2002
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