Discrete Power Devices

(a sub category of Active Components)

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Latest articles from 'Discrete Power Devices'

News releases from this sub-category

Showing 276-300 of 432 articles

Novel package advances MOSFET power density

A new power MOSFET package from Toshiba has the same board mounting footprint and terminal configuration as a conventional SOP-8 device yet can handle almost three times as much current.

News from Toshiba Electronics Europe, Dec 3, 2003

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IGBT modules for high-speed switching

Four new high-frequency IGBT modules feature very low switching losses and will suit high power applications where high-speed switching is a key design requirement.

News from Toshiba Electronics Europe, Nov 26, 2003

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Protected MOSFET takes inrush in its stride

The BSP75G is the first fully self-protected MOSFET device in the IntelliFET low-side array based platform integrating a configurable component array with a vertical power transistor on the same die.

News from Zetex, Nov 26, 2003

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MOSFET features submilliohm on-state resistance

A new sub-1mohm MOSFET demonstrates a significant reduction of approximately 40% in on-state resistance for MOSFETs compared with conventionally packaged products.

News from Philips Semiconductors, Nov 24, 2003

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MOSFETs provide cost-effective power management

Philips has expanded its mTrenchMOS family with a number of low-on-resistance MOSFETs ideally suited for use in wireless communication, mobile computing and consumer multimedia applications.

News from Philips Semiconductors, Nov 24, 2003

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Transistors integrate load-switch functionality

A new family of low-VCEsat (BISS) Loadswitch devices will allow design engineers to reduce component count and total system cost while saving more than 45% in board space.

News from Philips Semiconductors, Nov 12, 2003

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IEGT modules cut their losses and run cooler

A new range of 3.3kV IEGT modules combines low thermal resistances with reduced on-state losses and a 30% reduction of off-state losses when compared with conventional modules.

News from Toshiba Electronics Europe, Nov 12, 2003

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Thyristors for industrial and consumer application

Easby Electronics is offering new ranges of competitively priced, quality thyristors from Fagor Electronica.

News from Easby Electronics, Nov 10, 2003

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New outlet for Dynex

Europower Components has been signed up as a UK and Ireland distributor for the Dynex Semiconductor power semiconductor product range.

News from Europower Components, Nov 3, 2003

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Miniature Schottky barrier diodes power up

Five new ranges of miniature Schottky barrier diodes are all aimed at power-related applications.

News from Rohm Electronics (UK), Nov 3, 2003

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Big gains for audio-output transistors

A new family of audio bipolar transistors boasts the highest voltages available in the industry.

News from ON Semiconductor, Oct 28, 2003

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Transistors shrink for ultraminiature applications

Ultraminiature surface mount MOSFETs and bipolar junction transistors are now available in packages as small as 2.0 x 1.7 x 0.85mm.

News from Rohm Electronics (UK), Oct 21, 2003

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MOSFETs shrink automotive power management

A new range of trench HEXFET power MOSFETs includes the IRF2804S with 2.0mohm on-resistance in a D2Pak package.

News from International Rectifier, Oct 2, 2003

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Tiny SiGe transistors keep the noise down

Toshiba claims to have developed of the world's smallest and lowest noise radio frequency transistors for low noise amplifier applications.

News from Toshiba Electronics Europe, Sep 30, 2003

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Schottky shrinks into BGA packaging

The FlipKY is billed as the smallest Schottky diode in the industry.

News from International Rectifier, Sep 23, 2003

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Guide to bipolar power components

The latest selection guide from Zetex summarises its complete range of bipolar transistors and Schottky rectifier diodes.

News from Zetex, Sep 18, 2003

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Decoupling diode avoids dangers of redundancy

The MLY02 decoupling diode is a low-cost solution for use in the design of redundant power supplies or for the isolation of power sources and loads.

News from Puls UK, Sep 9, 2003

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MOSFETs boost power dissipation by 60%

Two new enhancement-mode trench MOSFETs feature half the on-resistance and twice the drain current of previous SOT23-packaged devices.

News from Zetex, Sep 5, 2003

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New package cuts FET thermal resistance

Agilent Technologies has put its highest linearity E-pHEMT field effect transistor in a new lower-thermal-resistance version of the miniature 2 x 2mm 8-pin leadless plastic chip carrier package.

News from Agilent Technologies, Aug 27, 2003

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Audio transistors are temperature compensated

The new Sanken SAPM01 Series of temperature-compensated audio transistors are now available from Allegro MicroSystems Europe.

News from Allegro MicroSystems Europe, Aug 26, 2003

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Novel package cuts discrete size and heat

Philips has a new generation of small discrete leadless devices packaged using quad flat nonleaded (QFN) technology.

News from Philips Semiconductors, Aug 18, 2003

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Dual MOSFETs shoehorn into tiny packages

A new range of complementary dual bipolar and MOSFET parts in 3 x 2 x 1mm micro leaded packages are claimed to match the performance levels of devices in much larger packages.

News from Zetex, Aug 14, 2003

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Low-voltage MOSFET liberates 60% of board space

The FDJ129P is a new P-channel MOSFET that offers a combination of performance and space-saving benefits in power management for portable applications.

News from Fairchild Semiconductor, Jul 30, 2003

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Planar MOSFETs show their merits

A new range of QFET planar MOSFETs uses advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, power factor correctio

News from Fairchild Semiconductor, Jul 16, 2003

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Loss-free packaging enhances MOSFET performance

Philips has expanded the range of power MOSFETs offered in its innovative SOT669 loss-free package (LFPAK).

News from Philips Semiconductors, Jul 16, 2003

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Showing 276-300 of 432 articles

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