Discrete Power Devices
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Latest articles from 'Discrete Power Devices'
News releases from this sub-category
Showing 226-250 of 432 articles
SiP280x pulsewidth modulation (PWM) controllers serve as versatile, low-cost building blocks for a broad variety of convertors.
News from Vishay Siliconix, Nov 10, 2004
STMicroelectronics has released a further range of low-voltage N-channel MOSFETs based on its STripFET technology.
News from STMicroelectronics, Oct 13, 2004
Two new radiation-hardened logic-level gate drive MOSFETs are designed to boost efficiency and performance in circuits that traditionally relied on bipolar transistors.
News from International Rectifier, Oct 6, 2004
Fairchild has extended its number-one position worldwide for discrete and analogue components that deliver and manage power, according to market research firms Databeans, Gartner and iSuppli.
News from Fairchild Semiconductor, Sep 29, 2004
The ZHCS350 40V-rated Schottky barrier diode outperforms much larger packaged devices in terms of VF/IR performance, continuous current handling capability and PCB space requirement.
News from Zetex, Sep 29, 2004
The latest ultraminiature, surface-mount, variable capacitance diodes from Toshiba are now available from BFi Optilas.
News from BFi Optilas, Sep 28, 2004
A new range of high-efficiency Mega Schottky rectifier diodes comes housed in compact flat lead SOD323F packages.
News from Philips Semiconductors, Sep 22, 2004
Philips has expanded its innovative uTrenchMOS range of power MOSFETs with the introduction of the PMN23UN.
News from Philips Semiconductors, Sep 21, 2004
Two new 1200V IGBT modules from Fairchild Semiconductor are designed for optimised on-state loss against turn-off switching loss.
News from Fairchild Semiconductor, Sep 10, 2004
HPA high-performance automotive TrenchMOS MOSFETs are now available in Philips' innovative loss-free LFPAK packaging.
News from Philips Semiconductors, Sep 1, 2004
Two new common-drain, chip-scale power MOSFETs are billed as are the industry's first such P-channel and 30V N-channel devices.
News from Vishay Siliconix, Aug 12, 2004
Zetex has appointed David Compton as Marketing Manager for its discrete power management devices.
News from Zetex, Jul 28, 2004
The Fagor Electronica range of discrete semiconductor devices is now available from Transonics.
News from Transonics, Jul 21, 2004
A new series of power trench MOSFETs is ideally suited for controlling the speed and direction of DC motors.
News from Philips Semiconductors, Jul 1, 2004
A new family of ultrafast-recovery diodes is ideally suited for power applications from medium to high switching frequencies and high rates of change of current.
News from Ixys Semiconductor, Jun 28, 2004
The NUD3048 is a highly integrated N-channel MOSFET featuring a breakdown voltage of 100V and a buffered gate voltage rating of 100V for use in -48V bus distribution power systems.
News from ON Semiconductor, Jun 28, 2004
Sunrise Electronics has a new series of power MOSFET devices manufactured in NEC's advanced UMOS-4 technology.
News from Sunrise Electronics, Jun 22, 2004
Agere Systems is delivering radio frequency (RF) power transistor products to Danam Communications of Korea.
News from Agere Systems, Jun 15, 2004
Two new 30V MOSFETs exhibit the benefits of improved fast-switching technology, especially when applied, respectively, to notebook computers and POL (point of load) convertor designs.
News from Fairchild Semiconductor, Jun 8, 2004
A new range of IGBTs is optimised for induction heating applications.
News from Ixys Semiconductor, Jun 8, 2004
Toshiba has expanded its family of IEGT (injection enhancement gate transistor) products with the industry's first 3.3kV, 1.2kA module to use trench gate semiconductor technology.
News from Toshiba Electronics Europe, Jun 2, 2004
Toshiba has combined multiple IEGT chips, the latest fast recovery diode technology and an advanced standard package design, to create a compact high-efficiency high-isolation 6.5kV, 600A IEGT module.
News from Toshiba Electronics Europe, Jun 2, 2004
A new chip-scale P-channel power MOSFET is claimed to offer the industry's lowest on-resistance of any such device with a footprint area under 3mm2.
News from Vishay Siliconix, May 31, 2004
Arrow Electronics has received a European award from Philips for shipping 1.5 billion of the manufacturer's general application discrete devices.
News from Arrow Electronics (UK), May 24, 2004
Dynex Semiconductor has released the first products in a range of high-efficiency, high-energy, phase control thyristors (SCRs).
News from Dynex Semiconductor, May 24, 2004
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