Discrete Power Devices
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Latest articles from 'Discrete Power Devices'
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Showing 76-100 of 432 articles
The use of lossless switching RF MOSFETs has become more important with increasing legislation on standby power consumption in electronic products.
News from First Components, Nov 19, 2007
AEC-Q101-qualified MOSFETs are the smallest on the market capable of handling power applications in the automotive environment.
News from Vishay Siliconix, Nov 15, 2007
N-channel MOSFETs feature 20V drain-to-source and gate-to-source voltage ratings and offer on-resistance specifications as low as 1.6mohm in the SO-8 footprint area
News from Vishay Siliconix, Nov 8, 2007
Microwave NPN transistor combines high switching frequency, high gain and very low noise to make it an ideal solution for a variety of RF applications.
News from NXP Semiconductors, Nov 7, 2007
Slew-rate-controlled switches are widely used in portable systems to replace discrete circuitry used to maximise battery efficiency and prolong battery life.
News from Advanced Analogic Technologies, Nov 1, 2007
The TPCA8012-H and TPCA8019-H N-channel MOSFETs extend the UMOS V-H series with higher drain current of 40 and 45A (maximum) and lower R(DSON) of 4.9 and 3.1mohm, respectively.
News from Toshiba Electronics Europe, Oct 16, 2007
Vishay Intertechnology's Siliconix p-channel MOSFETs can turn off features such as the display or the power amplifier when they are not being used.
News from Vishay Siliconix, Oct 11, 2007
Low-voltage transistors suit slimline products
Zetex Semiconductors' ZXTP25020CFF and ZXTP19020DFF serve as cost-effective switchers in a variety of portable applications.
News from Zetex, Sep 18, 2007
The FGH30N60LSD is designed to increase system efficiency while meeting low-frequency requirements.
News from Fairchild Semiconductor, Aug 24, 2007
Low-on-resistance N-channel MOSFETs boost system efficiency and offer new levels of ESD prptection.
News from Fairchild Semiconductor, Aug 16, 2007
Devices bring the MOSFET turn-on voltage into alignment with the 1.2 to 1.3V operating voltages of digital ICs used in mobile electronics, enabling safer and more reliable designs.
News from Vishay Siliconix, Aug 16, 2007
Package cuts MOSFETs down to size and heat
P-channel power MOSFETs in PowerPAK ChipFET packages promise advanced thermal performance in a compact 3 x 1.8mm footprint.
News from Vishay Siliconix, Jul 17, 2007
Solder-free IGBT module has five times higher temperature-cycling capability for convertors in electric and hybrid vehicles.
News from Semikron, Jul 6, 2007
Schottky diodes increase power efficiency
Dual 10 and 15A Schottky barrier diodes in TO-220IS isolated packages are made by KEC Corporation of Korea.
News from First Components, Jun 11, 2007
Power transistor delivers pulsed RF output power of 1kW at 130MHz and features the highest drain efficiency and power gain of any device in its class.
News from Freescale Semiconductor, Jun 6, 2007
World's first true 300W ultra-high-frequency transistor is designed for the TV transmitter/broadcast market.
News from NXP (formerly Philips Semiconductors), May 31, 2007
Complementary 40V MOSFET uses dual DPAK packaging to increase system reliability, reduce board space and cut overall system cost.
News from Fairchild Semiconductor, May 10, 2007
MOSFET family is designed for use in the protection circuitry of lithium-ion batteries for notebook PCs.
News from NEC Electronics (Europe), Apr 24, 2007
High-reliability Schottky rectifiers are manufactured in accordance to the Defense Supply Center Columbus Qualified Products List.
News from International Rectifier, Apr 19, 2007
Stealth II and Hyperfast II diodes help optimise LCD TV switch-mode power supply applications.
News from Fairchild Semiconductor, Apr 13, 2007
Chipset powers high-current DC/DC convertors used in advanced telecomms and datacomms systems, notebook, high-end desktops and servers.
News from International Rectifier, Apr 10, 2007
Low side self-protecting MOSFETs in SOT223 packages provide diagnostic feedback via a separate status pin.
News from Zetex, Apr 3, 2007
Two families of 200mW digital transistors integrate external resistor bias networks into the smallest form factor package on the market.
News from Fairchild Semiconductor, Mar 27, 2007
Three new gallium nitride (GaN) high electron-mobility transistors (HEMTs) provide good linear power and efficiency for WiMAX and broadband wireless applications operating between 2.3 and 3.9GHz.
News from Cree, Mar 21, 2007
Low-saturation-voltage transistors reduce power loss by 80% compared with general-purpose devices.
News from NXP (formerly Philips Semiconductors), Mar 9, 2007
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