Discrete Power Devices
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Latest articles from 'Discrete Power Devices'
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Showing 51-75 of 432 articles
Basestation transistor handles high power levels
The basestation power transistor increases power density by 20% and improves power efficiency by 2%, while reducing the thermal resistance by over 25% compared to the previous generation.
News from NXP Semiconductors, May 16, 2008
New devices allow designers to use robust low-cost IGBT technology in energy-sensitive circuits such as lighting ballasts operating well above 20kHz.
News from STMicroelectronics, May 14, 2008
A 600V N-channel MOSFET claims the industry's best on-resistance of 60mohm for fast-recovery MOSFETs in the standard TO-247 package.
News from STMicroelectronics, May 7, 2008
The world's first high-frequency high-voltage vertical field effect transistors deliver increased bandwidth, voltage and power levels to radar and avionic applications.
News from HVVi Semiconductors, May 1, 2008
With a low vertical clearance of 0.5mm, the new SOT-963 packaged NTUD312x devices satisfy the requirements of the new generation ultrathin handheld portable devices.
News from ON Semiconductor, Apr 17, 2008
The latest addition to Freescale's family of RF power LDMOS transistors is designed for TV transmitters employing both analogue and digital modulation formats.
News from Freescale Semiconductor, Apr 15, 2008
Typical applications include load switching and battery protection in portable devices such as cellphones, PDAs, digital cameras, MP3 players and smart phones.
News from Vishay Siliconix, Apr 10, 2008
Microsemi transistors incorporate an internal pre-match, which enables them to deliver the best possible performance over their entire operating frequency range.
News from Link Microtek, Apr 1, 2008
MOSFETs are designed for use in lithium ion battery packs and battery modules of mobile handsets.
News from MagnaChip Semiconductor, Mar 31, 2008
N-channel power MOSFET claims record-breaking specifications for on-resistance and figure of merit.
News from Vishay Siliconix, Mar 27, 2008
Field stop structure and avalanche-rugged trench gate technology combine to offer optimal tradeoffs between conduction losses and switching losses.
News from Fairchild Semiconductor, Mar 19, 2008
Zetex Semiconductors' ZXMN2F34MA suits space-starved switching and power management applications, such as external switches in buck/boost PoL convertors.
News from Zetex, Mar 6, 2008
Application-specific devices use IR's latest-generation field stop trench technology to reduce conduction and switching losses.
News from International Rectifier, Mar 6, 2008
SiC MESFETs are optimised for applications such as wideband military communications, secure communications, Class A and A/B amplifiers, TDMA, EDGE, CDMA, W-CDMA broadband amplifiers and WiMAX.
News from Digi-Key Corporation, Mar 5, 2008
MOSFETs deliver power dissipation and performance comparable to SOT23 but occupy only 14% of the printed circuit board space.
News from NXP Semiconductors, Feb 26, 2008
Devices enable the use of considerably smaller heatsinks, and also allow the end product to benefit from more reliable operation in hot environments.
News from STMicroelectronics, Feb 22, 2008
STripFET technology makes use of very high equivalent cell density and smaller cell features to achieve extremely low on-resistance and losses, while using less silicon area.
News from STMicroelectronics, Feb 21, 2008
Power MOSFET devices optimise DC/DC conversion and reduce power losses at critical current levels.
News from ON Semiconductor, Feb 18, 2008
The FDD4141 offers low on-resistance and 50% lower gate charge compared with current generation MOSFETs.
News from Fairchild Semiconductor, Feb 15, 2008
High-speed switching MOSFETs provide higher drain current and lower on-state resistance, combined with the power efficiency advantages of the UMOS V-H Series.
News from Toshiba Electronics Europe, Jan 18, 2008
Advanced architecture and advanced package manage heat dissipation and reduce power loss with a maximum on-resistance of 1.5mohm.
News from NEC Electronics (Europe), Jan 17, 2008
Breakdown voltage is more than 5x higher than previously reported highest values in GaN power transistors.
News from Panasonic Industrial Europe, Jan 9, 2008
Digi-Key now carries the full range of Vishay semiconductor and passive components.
News from Digi-Key Corporation, Dec 20, 2007
Benefits result from the low forward voltage drop and reverse recovery charge of integrated Schottky diode and the reduced PCB parasitic inductance from both devices on a single chip.
News from Vishay Siliconix, Dec 13, 2007
High-current N-channel device is intended particularly for the paralleling configuration power supplies that are widely used to increase system reliability in server applications.
News from STMicroelectronics, Dec 3, 2007
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