Discrete Power Devices

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Latest articles from 'Discrete Power Devices'

News releases from this sub-category

Showing 51-75 of 432 articles

Basestation transistor handles high power levels

The basestation power transistor increases power density by 20% and improves power efficiency by 2%, while reducing the thermal resistance by over 25% compared to the previous generation.

News from NXP Semiconductors, May 16, 2008

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Efficiency boost for budget IGBTs

New devices allow designers to use robust low-cost IGBT technology in energy-sensitive circuits such as lighting ballasts operating well above 20kHz.

News from STMicroelectronics, May 14, 2008

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Fast-recovery MOSFETs slash on-resistance

A 600V N-channel MOSFET claims the industry's best on-resistance of 60mohm for fast-recovery MOSFETs in the standard TO-247 package.

News from STMicroelectronics, May 7, 2008

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Novel architecture offers transistor breakthrough

The world's first high-frequency high-voltage vertical field effect transistors deliver increased bandwidth, voltage and power levels to radar and avionic applications.

News from HVVi Semiconductors, May 1, 2008

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Dual MOSFETs save space in portable kit

With a low vertical clearance of 0.5mm, the new SOT-963 packaged NTUD312x devices satisfy the requirements of the new generation ultrathin handheld portable devices.

News from ON Semiconductor, Apr 17, 2008

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RF transistor is ready for TV switchover

The latest addition to Freescale's family of RF power LDMOS transistors is designed for TV transmitters employing both analogue and digital modulation formats.

News from Freescale Semiconductor, Apr 15, 2008

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Low-profile MOSFETs cut on-resistance

Typical applications include load switching and battery protection in portable devices such as cellphones, PDAs, digital cameras, MP3 players and smart phones.

News from Vishay Siliconix, Apr 10, 2008

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High-power transistors take to the air

Microsemi transistors incorporate an internal pre-match, which enables them to deliver the best possible performance over their entire operating frequency range.

News from Link Microtek, Apr 1, 2008

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Power portfolio kicks off with MOSFETs

MOSFETs are designed for use in lithium ion battery packs and battery modules of mobile handsets.

News from MagnaChip Semiconductor, Mar 31, 2008

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MOSFET's merit means lower losses

N-channel power MOSFET claims record-breaking specifications for on-resistance and figure of merit.

News from Vishay Siliconix, Mar 27, 2008

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Efficiency gain for IGBTs

Field stop structure and avalanche-rugged trench gate technology combine to offer optimal tradeoffs between conduction losses and switching losses.

News from Fairchild Semiconductor, Mar 19, 2008

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MOSFET squeezes into tiny package

Zetex Semiconductors' ZXMN2F34MA suits space-starved switching and power management applications, such as external switches in buck/boost PoL convertors.

News from Zetex, Mar 6, 2008

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IGBTs reduce power dissipation for UPS systems

Application-specific devices use IR's latest-generation field stop trench technology to reduce conduction and switching losses.

News from International Rectifier, Mar 6, 2008

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Transistors support wide bandwidths

SiC MESFETs are optimised for applications such as wideband military communications, secure communications, Class A and A/B amplifiers, TDMA, EDGE, CDMA, W-CDMA broadband amplifiers and WiMAX.

News from Digi-Key Corporation, Mar 5, 2008

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Smaller outline for discrete transistors

MOSFETs deliver power dissipation and performance comparable to SOT23 but occupy only 14% of the printed circuit board space.

News from NXP Semiconductors, Feb 26, 2008

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Triacs maintain performance up to 150C

Devices enable the use of considerably smaller heatsinks, and also allow the end product to benefit from more reliable operation in hot environments.

News from STMicroelectronics, Feb 22, 2008

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MOSFETs cut on-resistance and gate charge

STripFET technology makes use of very high equivalent cell density and smaller cell features to achieve extremely low on-resistance and losses, while using less silicon area.

News from STMicroelectronics, Feb 21, 2008

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MOSFETs cut on resistance and gate charge

Power MOSFET devices optimise DC/DC conversion and reduce power losses at critical current levels.

News from ON Semiconductor, Feb 18, 2008

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P-channel MOSFET has negative attributes

The FDD4141 offers low on-resistance and 50% lower gate charge compared with current generation MOSFETs.

News from Fairchild Semiconductor, Feb 15, 2008

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MOSFETs boost DC/DC convertor efficiency

High-speed switching MOSFETs provide higher drain current and lower on-state resistance, combined with the power efficiency advantages of the UMOS V-H Series.

News from Toshiba Electronics Europe, Jan 18, 2008

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Power MOSFET meets automotive challenges

Advanced architecture and advanced package manage heat dissipation and reduce power loss with a maximum on-resistance of 1.5mohm.

News from NEC Electronics (Europe), Jan 17, 2008

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GaN transistor beats breakdown record

Breakdown voltage is more than 5x higher than previously reported highest values in GaN power transistors.

News from Panasonic Industrial Europe, Jan 9, 2008

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Distribution deal extends to full line

Digi-Key now carries the full range of Vishay semiconductor and passive components.

News from Digi-Key Corporation, Dec 20, 2007

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MOSFET and diode on one chip boost efficiency

Benefits result from the low forward voltage drop and reverse recovery charge of integrated Schottky diode and the reduced PCB parasitic inductance from both devices on a single chip.

News from Vishay Siliconix, Dec 13, 2007

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MOSFET cuts on-resistance to new lows

High-current N-channel device is intended particularly for the paralleling configuration power supplies that are widely used to increase system reliability in server applications.

News from STMicroelectronics, Dec 3, 2007

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Showing 51-75 of 432 articles

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